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7904

New
1 €
IRF7904PbF HEXFET Power MOSFETMOSFET1 (Switch Q1): Optimized for low switching losses Low Gate Charge (11nC typical)VDS=30VID=7.6A @ VGS=10VMOSFET2 (Switch Q2): Optimized to minimize conduction losses icludes SyncFET Schottky body diodeVDS=30VID=11A @ VGS=10V
1 €
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