Type
Transistor Silicon NPN
Manufacturer
Panasonic
Vbr CBO
55
Vbr CEO
55
Max. PD (W)
150m
Derate (Amb) (W/°C)
1.5m
hfe
1.0k=
Ic Max. (A)
100m
Icbo Max. @Vcb Max. (A)
100n
Polarity
NPN
Trans. Freq (Hz) Min.
250M
@VCE (test) (V)
5.0i
Oper. Temp (°C) Max.
125
@Ic (A)
2.0
Pinout Equivalence Number
3-10
Surface Mounted Yes/No
NO
Maximum Collector Power Dissipation (Pc)
0.15 W
Maximum Collector-Base Voltage |Vcb|
55 V
Maximum Collector-Emitter Voltage |Vce|
55 V
Maximum Emitter-Base Voltage |Veb|
5 V
Maximum Collector Current |Ic max|
0.1 A
Max. Operating Junction Temperature (Tj)
175 °C
Transition Frequency (ft):
150 MHz
Forward Current Transfer Ratio (hFE), MIN
800
Type
Transistor Silicon NPN
Manufacturer
Panasonic
Vbr CBO
55
Vbr CEO
55
Max. PD (W)
150m
Derate (Amb) (W/°C)
1.5m
hfe
1.0k=
Ic Max. (A)
100m
Icbo Max. @Vcb Max. (A)
100n
Polarity
NPN
Trans. Freq (Hz) Min.
250M
@VCE (test) (V)
5.0i
Oper. Temp (°C) Max.
125
@Ic (A)
2.0
Pinout Equivalence Number
3-10
Surface Mounted Yes/No
NO
Maximum Collector Power Dissipation (Pc)
0.15 W
Maximum Collector-Base Voltage |Vcb|
55 V
Maximum Collector-Emitter Voltage |Vce|
55 V
Maximum Emitter-Base Voltage |Veb|
5 V
Maximum Collector Current |Ic max|
0.1 A
Max. Operating Junction Temperature (Tj)
175 °C
Transition Frequency (ft):
150 MHz
Forward Current Transfer Ratio (hFE), MIN
800